1200V IGBT IGW40N120H3

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产品价格： < 面议

产品型号：IGW40N120H3

品牌：其它品牌

公司名称：常州市杜安进出口有限公司

所在地：江苏常州

浏览次数：1551 次

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产品简介

   [IGBT]
IGBT

IGBT(Insulated Gate Bipolar Transistor)，绝缘栅双极型晶体管，是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件, 兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。GTR饱和压降低，载流密度大，但驱动电流较大;MOSFET驱动功率很小，开关速度快1200V IGBT

产品详细信息

Infineon TRENCHSTOP™ IGBT

High-efficiency low-loss IGBTs
Infineon's outstanding trench and fieldstop technologies reduce saturation voltages well below the levels offered by competing standard NPT IGBTs - without increasing switching losses.
Comprehensive portfolio available in 600V, 1200V

Target applications: Solar inverters, drives, UPS & all other hard switching applications

Infineon's new 3rd Generation HighSpeed family

The new 600V and 1200V 3rd Generation HighSpeed IGBT family is optimized for hard- and soft-switching topologies. The family sets a new benchmark for switching losses and is recommended for use in topologies switching at more than 20kHz.
The very short tail-current, and low turn off losses (25% less then the closest competitor) are the key features of this new family and up to 15% efficiency can be attained by implementing this family in your design.
Not only does the family offer very low switching losses, the conduction losses are also very low. This is thanks to the world famous TRENCHSTOP ^TM technology from Infineon that has an intrinsically very low V _ce(sat) behaviour.

Offering:

Lowest switching losses for switching frequencies above 20kHz giving high efficiency
Soft switching waveforms for excellent EMI behaviour
Low V _ce(sat) giving low conduction losses
Optimized diode for target applications meaning low diode losses and fast recovery time
RoHS compliant
Positive V _ce(sat) temperature coefficient meaning thermal runaway is not an issue and paralleling is easy
5μs short circuit rating
1200V IGBT
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